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MEMORIA KINGSTON PARA NOTEBOOK
SODIMM - DDR4 - 3200MHZ - 16GB
KVR32S22D8/16
16GB 2Rx8 2G x 64-Bit PC4-3200
CL22 260-Pin SODIMM
CARACTERISTICAS
• Power Supply: VDD = 1.2V Typical
• VDDQ = 1.2V Typical
• VPP = 2.5V Typical
• VDDSPD = 2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
• Dual-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• PCB: Height 1.18" (30.00mm)
• RoHS Compliant and Halogen-Free
ESPECIFICACIONES
• CL(IDD): 22 cycles
• Row Cycle Time (tRCmin): 45.75ns(min.)
• Refresh to Active/Refresh: 350ns(min.)
• Command Time (tRFCmin)
• Row Active Time (tRASmin): 32ns(min.)
• UL Rating: 94 V - 0
• Operating Temperature: 0 °C to +85 °C
• Storage Temperature: -55 °C to +100 °C
Memoria Ram 16gb Ddr4 Kingston Sodimm 3200mhz Notebook
MEMORIA KINGSTON PARA NOTEBOOK
SODIMM - DDR4 - 3200MHZ - 16GB
KVR32S22D8/16
16GB 2Rx8 2G x 64-Bit PC4-3200
CL22 260-Pin SODIMM
CARACTERISTICAS
• Power Supply: VDD = 1.2V Typical
• VDDQ = 1.2V Typical
• VPP = 2.5V Typical
• VDDSPD = 2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
• Dual-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• PCB: Height 1.18" (30.00mm)
• RoHS Compliant and Halogen-Free
ESPECIFICACIONES
• CL(IDD): 22 cycles
• Row Cycle Time (tRCmin): 45.75ns(min.)
• Refresh to Active/Refresh: 350ns(min.)
• Command Time (tRFCmin)
• Row Active Time (tRASmin): 32ns(min.)
• UL Rating: 94 V - 0
• Operating Temperature: 0 °C to +85 °C
• Storage Temperature: -55 °C to +100 °C
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